Electronics (1.2 CEUs)

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This course is divided into 2 sessions. Each session will be 6 hours in duration. The sessions will be held on Oct 14&15, 2026.
This course will be offered in 2027 on the following dates : 
Feb 22&23 and will offered again on Oct 14&15.

 
  • Course Description
 Introduction to semiconductors. Conduction in metals. Intrinsic and extrinsic semiconductors. Electrical properties of semiconductors. Diffusion process in semiconductors. The PN junction diode. Open-circuited junction. Forward, reverse biased junction. VI static characteristics. Temperature effects. Small and large-signal models. Junction capacitance and switching times. Diode types and applications. Rectification. Rectifier filters. Clipper and clamper circuits. Voltage multipliers. Zener, varactor and Schottky diodes. LED and Photodiode applications. Bipolar Junction Transistors (BJT): Ebers-Moll mode. CB and CE characteristics. DC biasing and analysis. BJT as a switch and amplifier. Small-signal models. Transistor ratings. Fieldeffect Transistor (FET): VI characteristics of JFET and MOSFET. FET transistor as a switch and amplifier. Small-signal models. The MOSFET transistor. Transistor ratings.
 
  • Objective
The overall objective is is to introduce the student to semiconductor devices, specifically circuit analysis, design, and applications of diode circuits, BJT basic structure and operation, DC biasing, small-signal circuit model, and possible amplifier configurations. FET types, basic structure and operation, DC biasing, small-signal circuit model, and possible amplifier configurations.
 
  • Target Audience  
Engineers who want to equivalent his/her degree in any country
 
  • Learning Objectives 
  1. Understand semiconductor materials, their types, and properties. 
  2. Understand the principle of operation and characteristics of the P–N junction. 

  3. Analyze and design circuits containing diode applications, including half-wave, full-wave, and bridge rectifier configurations. 

  4. Understand the operation of a P–N junction in the breakdown region. 

  5. Analyze circuits containing Zener diode applications, such as Zener diode–based voltage regulators. 

  6. Understand the physical structure, principle of operation, and characteristics of BJT and FET transistors (MOSFET and JFET). 

  7. Perform DC analysis of BJT and FET circuits and determine the transistor bias point. 

  8. Become familiar with different biasing configurations of BJT and FET amplifier circuits. 

 
 
 

Dr.Hasan Farahneh

Dr. Hasan Farahneh, PhD in Electrical and Computer Engineering, is currently an Assistant Professor at JU.
He brings over 16 years of industry experience, having contributed to major projects with leading companies in the field.
Dr. Farahneh has an extensive record of accomplishments, including successful implementation of large-scale engineering initiatives and innovative research in electrical and computer engineering. He has published more than 40 articles in reputable journals and books, reflecting  his significant contributions to both academia and industry.                                                                                                                                                                                                                                                                                                                                      

1. Semiconductor Materials and P–N Junctions

  • Units and semiconductor fundamentals

  • Intrinsic and extrinsic semiconductors

  • N-type and P-type semiconductor materials

  • Doped semiconductor materials

  • P–N junction structure and characteristics

  • Depletion region and threshold voltage

  • Forward and reverse biasing of P–N junctions

  • Breakdown region behavior

  • I–V characteristics of P–N junctions

2. Diodes

  • Ideal diode vs. real diode behavior

  • Physical operation of diodes

  • Analysis of diode circuits

  • Small-signal model and applications

  • Operation in the reverse breakdown region (Zener diodes)

  • Rectifier circuits

  • Limiting and clamping circuits

3. Bipolar Junction Transistors (BJTs)

  • Physical structure and modes of operation

  • Operation of the NPN transistor in active mode

  • Circuit symbols and conventions

  • DC analysis of transistor circuits

  • BJT as an amplifier

  • Small-signal equivalent circuit models

  • Biasing the BJT for discrete-circuit design

  • Basic single-stage BJT amplifier configurations

  • BJT as a switch (cutoff and saturation)

4. Field-Effect Transistors (FETs)

  • Structure and physical operation of MOSFETs and JFETs

  • Current–voltage characteristics

  • DC analysis of MOSFET and JFET circuits

  • MOSFET as an amplifier

  • Biasing in MOSFET amplifier circuits

  • Basic single-stage MOSFET amplifier configurations

TLNT reserves the right to cancel or change the date or location of its events. TLNT's responsibility will, under no circumstances, exceed the amount of the fee collected. TLNT is not responsible for the purchase of non-refundable travel arrangements or accommodations or the cancellation/change fees associated with cancelling them. Please call to confirm that the course is running before confirming travel arrangements and accommodations. Please click here for complete policies.

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